碳化硅与氮化镓退火与石墨烯生长高温加热炉

 

特征及优势

• High activation rate
• Minimal surface roughness
• Temperatures up to 2000°C
• Processing of wafer sizes from 2“ to 150 mm
• Batch size 5 or 50 wafers
• Heating rate up to 100 K/min

适合工艺：

• 退火碳化硅与氮化镓晶圓
• 石墨烯发展