Activator 150

High-temperature furnace for SiC and GaN annealing and graphene growth

The centrotherm Activator 150 high temperature furnace line has been developed for post implantation annealing of Silicon Carbide (SiC) or Gallium Nitride (GaN) devices. The Activator 150 is available in various versions as R&D and serial production furnace and offers a high process flexibility. The unique design of the centrotherm metal-free heating allows process temperatures up to 1850 °C and shorter process cycle times. The Activator 150 allows a cost-effective production due to its small footprint and low cost of ownership.